62012 tkim/o3003 tsim ta-100124 no.7358-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 30a02ch bipolar transistor ? 30v, ? 0.7a, low v ce ( sat ) pnp single cph3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? low-frequency ampli er, high-speed switching, small motor drive features ? large current capacitance ? low collector-to-emitter saturation voltage (resistance) r ce (sat) typ.=580m [i c =0.7a, i b =35ma] ? small on-resistance (ron) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo --30 v collector-to-emitter voltage v ceo --30 v emitter-to-base voltage v ebo -- 5 v collector current i c --700 ma collector current (pulse) i cp --1.4 a collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 700 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7015a-003 ordering number : en7358a product & package information ? package : cph3 ? jeita, jedec : sc-59, to-236, sot-23 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection 3 2 1 al lot no. tl 30A02CH-TL-E 1 : base 2 : emitter 3 : collecto r cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95
30a02ch no.7358-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = --30v, i e =0a --100 na emitter cutoff current i ebo v eb = --4v, i c =0a --100 na dc current gain h fe v ce = --2v, i c = --10ma 200 500 gain-bandwidth product f t v ce = --10v, i c = --50ma 520 mhz output capacitance cob v cb = --10v, f=1mhz 4.7 pf collector-to-emitter saturation voltage v ce (sat) i c = --200ma, i b = --10ma --110 --220 mv base-to-emitter saturation voltage v be (sat) i c = --200ma, i b = --10ma --0.9 --1.2 v collector-to-base breakdown voltage v (br)cbo i c = --10 a, i e =0a --30 v collector-to-emitter breakdown voltage v (br)ceo i c = --1ma, r be = --30 v emitter-to-base breakdown voltage v (br)ebo i e = --10 a, i c =0a --5 v turn-on time t on see speci ed test circuit. 35 ns storage time t stg 125 ns fall time t f 25 ns switching time test circuit ordering information device package shipping memo 30A02CH-TL-E cph3 3,000pcs./reel pb free v r r b v cc = --12v v be =5v + + 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --300ma 0 0 --200 --100 i c -- v ce it05049 it05050 --400 --300 --600 --500 --700 --200 --600 --400 --800 --1000 --100 --500 --300 --700 --900 0 0 i c -- v be --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --200 --800 --500 --700 --400 --300 --600 --100 i b =0 ta=75 c 25 c --25 c --500 a --1ma --2ma --5ma --3ma --7ma --10ma --15ma --40ma --50ma --30ma --20ma --25ma v ce = --2v collector-to-emitter voltage, v ce -- mv collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma
30a02ch no.7358-3/6 it05053 --1.0 0.1 cob -- v cb --10 2 3 5 7 2 3 5 2 3 5 7 10 2 5 7 f=1mhz it05055 v ce (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 it05056 v be (sat) -- i c 3 --1.0 2 5 7 3 --10 --0.1 ta= --25 c 75 c 25 c --1.0 23 57 --10 23 57 23 57 --100 --1000 --10 3 --1000 2 2 3 5 7 2 3 5 7 --100 ta=75 c --25 c 25 c it05052 --1.0 f t -- i c 23 57 23 57 23 57 --10 --100 --1000 100 1000 5 7 2 3 v ce = --10v i c / i b =50 i c / i b =20 collector current, i c -- ma gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v 0 0 it05047 100 200 300 600 400 500 700 800 40 20 100 120 60 80 140 160 collector dissipation, p c -- mw ambient temperature, ta -- c p c -- ta mounted on a ceramic board(600mm 2 ? 0.8mm) f=1mhz --0.1 0.1 base current, i b -- ma ron -- i b on resistance, ron -- it06403 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 --1.0 --10 out in 1k 1k i b it05051 3 100 h fe -- i c --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 --100 --1000 2 3 5 1000 7 5 7 v ce = --2v ta=75 c 25 c --25 c it05054 --1.0 v ce (sat) -- i c 23 57 --10 23 57 23 57 --100 --1000 --1000 --100 2 3 5 7 2 3 5 7 --10 ta=75 c -- 2 5 c 25 c i c / i b =20 collector current, i c -- ma dc current gain, h fe collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv
30a02ch no.7358-4/6 embossed taping speci cation 30A02CH-TL-E
30a02ch no.7358-5/6 outline drawing land pattern example 30A02CH-TL-E mass (g) unit 0.013 * for reference mm unit: mm 0.6 2.4 0.95 0.95 1.4
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